Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates
نویسندگان
چکیده
The correlation between the internal quantum efficiency (IQE) and effective diffusion length estimated by cathodoluminescence intensity line profile near dark spots, including effect of non-radiative recombination due to point defects, was experimentally clarified for AlGaN multiple wells (MQWs) on face-to-face annealed (FFA) sputter-deposited AlN templates with different IQEs similar dislocation densities. IQEs, which were determined temperature- excitation-power-dependent photoluminescence measurements, independent spot densities increased increasing (Leff) from analysis. These results suggested that MQW/FFA samples governed defect density. fitting relationship IQE Leff Cmax explained experimental qualitatively.
منابع مشابه
InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
Epitaxial lateral overgrowth of gallium nitride with 1 1 2̄ 2 facets was realized by metal organic chemical vapor deposition on GaN/ sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate ...
متن کاملDeep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
We report the development of Al0.7Ga0.3N /AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm III /V 1 to 250 nm III /V 1 with internal quantum efficiency varying from 5% to 50%, respectively. To ...
متن کاملDual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and N isotopes
on AlN using AlN/GaN/AlN quantum wells and N isotopes Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, and Debdeep Jena Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersbu...
متن کاملAlGaN/AlN multiple quantumwells grown by MOVPE on AlN templates using nitrogen as a carrier gas
AlxGa1 xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and materi...
متن کاملValence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2023
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0145131